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DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BF862 N-channel junction FET
Preliminary specification 1999 Jun 29
Philips Semiconductors
Preliminary specification
N-channel junction FET
FEATURES * High transition frequency for excellent sensitivity in AM car radios * High transfer admittance. APPLICATIONS * Pre-amplifiers in AM car radios.
handbook, halfpage
BF862
PINNING SOT23 PIN 1 2 3 source drain gate DESCRIPTION
3
DESCRIPTION Silicon N-channel symmetrical junction field-effect transistor in a SOT23 package. Drain and source are interchangeable.
1 Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL VDS VGS (off) IDSS Ptot |yfs| Tj PARAMETER drain-source voltage gate-source cut-off voltage drain-source current total power dissipation transfer admittance junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. Ts 92 C CONDITIONS MIN. - - 10 - 30 - TYP. - -0.7 - - 40 - MAX. 20 - 25 225 - 150 UNIT V V mA mW mS C
1999 Jun 29
2
Philips Semiconductors
Preliminary specification
N-channel junction FET
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VDS VDG VGS IDS IG Ptot Tstg Tj PARAMETER drain-source voltage drain-gate voltage gate-source voltage drain-source current forward gate current total power dissipation storage temperature junction temperature Ts 92 C CONDITIONS - - - - - - -65 - MIN.
BF862
MAX. 20 20 -20 40 10 225 +150 150
UNIT V V V mA mA mW C C
THERMAL CHARACTERISTICS SYMBOL Rth j-s Notes 1. Soldering point of the gate lead. PARAMETER thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 260 UNIT K/W
MGS298
handbook, halfpage
250
Ptot (mW)
200
150
100
50
0 0 40 80 120 Ts (C) 160
Fig.2 Power derating curve.
1999 Jun 29
3
Philips Semiconductors
Preliminary specification
N-channel junction FET
STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)GSS VGS VGS (off) IGSS IDSS PARAMETER gate-source breakdown voltage gate-source forward voltage gate-source cut-off voltage reverse gate current drain-source current CONDITIONS IGS = -1 A; VDS = 0 VDS = 0; IG = 1 mA VDS = 8 V; ID = 1 A VGS = -15 V; VDS = 0 V GS = 0; VDS = 8 V MIN. -20 - - - 10 TYP. - - -0.7 - -
BF862
MAX. - 1 - -1 25
UNIT V V V nA mA
DYNAMIC CHARACTERISTICS Common source; Tamb = 25 C; VGS = 0; VDS = 8 V; unless otherwise specified. SYMBOL yfs gos Ciss Crss en fT PARAMETER common source forward transfer T j = 25 C admittance common source output conductance input capacitance reverse transfer capacitance equivalent noise input voltage transition frequency T j = 25 C f = 1 MHz f = 1 MHz f = 100 kHz CONDITIONS MIN. 30 - - - - - TYP. 40 - 10 2.5 0.8 640 MAX. - 400 - - - - UNIT mS S pF pF nV/Hz MHz
1999 Jun 29
4
Philips Semiconductors
Preliminary specification
N-channel junction FET
PACKAGE OUTLINE
BF862
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Jun 29
5
Philips Semiconductors
Preliminary specification
N-channel junction FET
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BF862
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Jun 29
6
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 66
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125004/00/01/pp7
Date of release: 1999
Jun 29
Document order number:
9397 750 06154

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